[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-5] Computational nano OPC DFM for LV Fin-type SRAM

〇Kazuya Kadota¹ (1.NanoscienceLab)

Keywords:Ultra-Low Supply SRAM,Fin-type Transistor,DFM technology

Design For Manufacturing (DFM) where the state-of-the-art nano-devices of the sub-20nm node to a subject, for each of the technology has been intricately sophisticated, comprehensive optimization to predict the performance of the device came become very important. To get effective solutions on these subjects, one of the lithographic key is a nano Optical Proximity Correction (OPC) control with SMO technology, and another is Total Computer Aided Design (TCAD) approach using the most advanced computer simulations. And, it is very important to obtain DFM solutions by integrating both. On the other hand, to meet the needs of low-voltage drive and the characteristic variation reduction, in order to obtain a state-of-the-art device performance, the Fin-type transistors are introduced globally as the mainstream because of wider process control margin.