[19a-S224-1~10] 13.6 Semiconductor English Session

▲ [19a-S224-1] Distribution of Single-Ion Implanted Dopants in Silicon Investigated by Atom Probe Tomography

〇(D)TU Yuan¹、Han Bin¹、Shimizu Yasuo¹、Inoue Koji¹、Yano Maasa²、Chiba Yuki²、Tanii Takashi²、Shinada Takahiro³、Nagai Yasuyoshi¹ (1.IMR Tohoku Univ.、2.Waseda Univ.、3.CIES Tohoku Univ.)

キーワード：single ion implantation,atom probe,SRIM

A Single Ion Implantation (SII) method was put forward to precisely control the amount and position of the dopants, which is of great importance for down-scaling semiconductor devices toward 10 nm. Atom Probe Tomography (APT) is utilized to investigate the fine distribution of dopant ions, so as to evaluate the accuracy of the SII process. The concentration-maximum center was successfully detected. The lateral distribution of Ge ions was evaluated to be localized within 60 nm in diameter range.