[19p-H111-1~22] 6.3 Oxide electronics

△ [19p-H111-1] High-energy ion irradiation effect in modifying transition characteristics of VO₂ films in rf substrate bias sputtering

〇(D)BintiAzhan NurulHanis¹, Kunio Okimura¹, Yoshiyuki Ohtsubo², Shin-ichi Kimura², Mustapha Zaghrioui³, Joe Sakai³ (1.Tokai Univ., 2.Osaka Univ., 3.GREMAN, Univ. Tours)

Keywords:vanadium dioxide,biased sputtering,insulator-metal transition IMT

Control of insulator-metal transition (IMT) characteristics of VO₂ film is expected. In this study, high-energy ion irradiation in biased reactive sputtering enabled significant modification of insulator metal transition temperature, T_IMT of VO₂ films even in rather thick films, by maintaining both transition and hysteresis properties. As the biasing power increases, significant shortened and lengthened of in-plane and out-of-plane axis, and oxygen vacancies induced were observed through TEM and XPS measurements. During presentation, details of high-energy ion irradiation on the VO₂ transition properties, including stress state of the V atoms pair and Fermi level behavior will be discussed.