[19p-H111-1~22] 6.3 Oxide electronics

△ [19p-H111-2] Crack-free metal-insulator transition in epitaxial VO2 films by relaxing elastic energy

〇(M2)Kohei Omori¹, Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

Keywords:metal insulator transition oxide,VO2,micro crack

VO₂ is metal-insulator transition material which has the steep resistivity change by 3-4 order during transition raised by temperature ,doping electrron, and so on. Epitaxial VO₂ flim on substrate produced microcracls from disrocation defect, so it could not have steep resistivity change. In this research, we revealed producing microcracks is from not only disrocation defect but also elastic energy in VO₂ film, and by wiring VO₂, which affect it to relax elastic energy, we decreased producing microcracks and got similar steep resistivity change to in bulk VO₂.