The 63rd JSAP Spring Meeting, 2016

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[19p-H111-1~22] 6.3 Oxide electronics

Sat. Mar 19, 2016 1:15 PM - 7:00 PM H111 (H)

Kazunori Ueno(Univ. of Tokyo), Takashi Tsuchiya(Tokyo Univ. of Sci.)

3:15 PM - 3:30 PM

[19p-H111-9] Electrochemical Hydrogen Doping to TiO2/SiO2 Interfaces

〇Takeaki Yajima1, Tomonori Nishimura1, Akira Toriumi1 (1.Univ. of Tokyo)

Keywords:hydrogen,TiO2 interface,ion implantation

Electrochemical process at room temperature is expected as a convenient alternative of ion implantation in oxide semiconductors. Such an electrochemical carrier doping was demonstrated by using a representative oxide semiconductor of anatase TiO2. The dopant hydrogen was found to be stabilized at the TiO2/SiO2 interface with an energy barrier of 1.2 eV.