Al Sustitution level dependence of acoustic properties for Ca3Ta(Ga1-xAlx)3Si2O14(x=0,0.25,0.5,0.75) single crystals

Tetsuo Kudo; Yuui Yokota; Yuji Ohashi; Yasuhiro Shoji; Kei Kamada; Shunsuke Kurosawa; Akira Yoshikawa

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[19p-H112-1~15] 15.1 Bulk crystal growth

Sat. Mar 19, 2016 1:15 PM - 5:15 PM H112 (H)

Hiraku Ogino(Univ. of Tokyo), Satoshi Watauchi(Univ. of Yamanashi)

3:45 PM - 4:00 PM

[19p-H112-10] Al Sustitution level dependence of acoustic properties for Ca₃Ta(Ga_1-xAl_x)₃Si₂O₁₄(x=0,0.25,0.5,0.75) single crystals

〇Tetsuo Kudo¹, Yuui Yokota², Yuji Ohashi¹, Yasuhiro Shoji^1,3, Kei Kamada^2,3, Shunsuke Kurosawa², Akira Yoshikawa^1,2,3 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A)

Keywords:Piezoelectric material

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Presentation information

[19p-H112-1~15] 15.1 Bulk crystal growth

[19p-H112-10] Al Sustitution level dependence of acoustic properties for Ca3Ta(Ga1-xAlx)3Si2O14(x=0,0.25,0.5,0.75) single crystals

[19p-H112-10] Al Sustitution level dependence of acoustic properties for Ca₃Ta(Ga_1-xAl_x)₃Si₂O₁₄(x=0,0.25,0.5,0.75) single crystals