Oral presentation

[19a-H112-1~8] 15.1 Bulk crystal growth

Sat. Mar 19, 2016 9:45 AM - 11:45 AM H112 (H)

Yuui Yokota(Tohoku Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:45 AM - 10:00 AM

△ [19a-H112-1] Thickness dependence of AlN crystal quality fabricated by Elementary Source Vapor Phase Epitaxy (ESVPE)

〇(M1)Katsuhiro Kishimoto¹, PeiTsen Wu¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[19a-H112-2] Lateral Dopant Segregation of β-Ga₂O₃ Single Crystals by Edge-defined Film-fed Growth (EFG) Method

〇Shinya Watanabe¹, Kimiyoshi Koshi¹, Yu Yamaoka¹, Takekazu Masui¹, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp.)

10:15 AM - 10:30 AM

[19a-H112-3] Directionally Solidified β-Ga₂O₃ Single Crystals (Ⅰ)

〇Takumi Kobayashi¹, Etsuko Ohba¹, Yoshio Nakamura¹, Chihiro Miyagawa¹, Kazutaka Shibuya¹, Jun Yanagisawa¹, Minami Nakazawa¹, Keigo Hoshikawa² (1.FMC, 2.Shinshu Univ.)

10:30 AM - 10:45 AM

[19a-H112-4] Directionally Solidified β-Ga₂O₃ Single Crystals (Ⅱ)

〇Etsuko Ohba¹, Takumi Kobayashi¹, Yoshio Nakamura¹, Chihiro Miyagawa¹, Kazutaka Shibuya¹, Jun Yanagisawa¹, Minami Nakazawa¹, Keigo Hoshikawa² (1.FMC, 2.Shinshu Univ.)

10:45 AM - 11:00 AM

▲ [19a-H112-5] Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth

〇(P)Xin Liu¹, Bing Gao¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:00 AM - 11:15 AM

[19a-H112-6] Tilting effects of ellipsoidal mirror on crystal growth of silicon by IR-FZ method

〇Satoshi Watauchi¹, Md. Mukter Hossain¹, Masanori Nagao¹, Isao Tanaka¹ (1.Univ. of Yamanashi)

11:15 AM - 11:30 AM

[19a-H112-7] Effect of inner wall of the crucible and B₂O₃addition on the quality in the VB-Ge crystal growth

〇(M2)Tomoki Arahama¹, Yuki Hiraga¹, Toshinori Taishi¹ (1.Shinshu Univ.)

11:30 AM - 11:45 AM

[19a-H112-8] Numerical Simulation on InGaSb Crystal Growth on International Space Station

〇Yasunori Okano^1,2,3, Jin Xin¹, Takuya Yamamoto¹, Youhei Takagi¹, Yasuhiro hayakawa², Yuko Inatomi³ (1.Osaka Univ., 2.RIE, Shizuoka Univ., 3.JAXA)

Oral presentation

[19p-H112-1~15] 15.1 Bulk crystal growth

Sat. Mar 19, 2016 1:15 PM - 5:15 PM H112 (H)

Hiraku Ogino(Univ. of Tokyo), Satoshi Watauchi(Univ. of Yamanashi)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:15 PM - 1:30 PM

[19p-H112-1] Observation of Stacking Faults in Silica Colloidal Crystals

〇yoshimasa ohki¹, Nakano yuji¹, kawanaka satoshi¹, imai hiroki¹, uchida fumio¹ (1.Fuji Chemical Co., Ltd)

1:30 PM - 1:45 PM

[19p-H112-2] Two-dimensional nucleation of colloidal crystals

〇Jun Nozawa¹, Sumeng Hu¹, Guo Suxia¹, Koizumi Haruhiko¹, Fujiwara Kozo¹, Uda Satohi¹ (1.Tohoku Univ.)

1:45 PM - 2:00 PM

[19p-H112-3] The Effect of the Morphology of the Solid/liquid Interface on Impurity Partitioning Behaviours during Colloidal Polycrystallization

Sumeng Hu¹, 〇Jun Nozawa¹, Suxia Guo¹, Haruhiko Koizumi¹, Kozo Fujiwara¹, Satoshi Uda¹ (1.Tohoku Univ.)

2:00 PM - 2:15 PM

[19p-H112-4] Relaxation of a large amount of local strain in protein crystals by using seed crystals

〇Haruhiko Koizumi¹, Satishi Uda¹, Masaru Tachibana², Katsuo Tsukamoto³, Kenichi Kojima⁴, Jun Nozawa¹ (1.IMR, Tohoku Univ., 2.Yokohama City Univ., 3.Osaka Univ., 4.Yokohama Soei Univ.)

2:15 PM - 2:30 PM

[19p-H112-5] Investigation on primary phases in potassium tantalate niobate (KTN) crystal growth

〇Toshinori Taishi¹, Kosuke Ito¹, Kazuya Hosokawa¹, Keigo Hoshikawa¹, Takahiro Kojima², Takayuki Komatsu³ (1.Shinshu Univ., 2.Oxide, 3.NTT Advanced Technology)

2:30 PM - 2:45 PM

[19p-H112-6] Observation of Dislocations in a Lithium Tantalate

〇Tomio Kajigaya¹, Masashi Sugiyama¹, Haruo Ishikawa¹, Ichiro Yonenaga², Yutaka Oono² (1.Sumitomo Metal Mining, 2.Tohoku Univ.)

2:45 PM - 3:00 PM

[19p-H112-7] Evaluation of SAW Properties of Metal-Doped LiTaO₃ Substrates

〇Masashi Sugiyama¹, Akira Terashima¹, Tomio Kajigaya¹, Junji Iida¹, Satoshi Uda², Ken-ya Hashimoto³ (1.Sumitomo Metal Mining Co., Ltd., 2.Tohoku Univ., 3.Chiba Univ.)

3:00 PM - 3:15 PM

[19p-H112-8] Oxygen Partitioning during Growth of Congruent Lithium Niobate (3)

〇Satoshi Uda¹, Chihiro Koyama¹ (1.IMR, Tohoku Univ.)

3:30 PM - 3:45 PM

▲ [19p-H112-9] Electrical resistivity, dielectric and piezoelectric properties of Ca₃TaGa_3-xAl_xSi₂O₁₄ (CTGAS) single crystals as a function of Al content

〇(D)Xiuwei Fu^1,2, Encarnacion G. Villora¹, Yuuki Kitanaka³, Yuji Noguchi³, Masaru Miyayama³, Kiyoshi Shimamura^1,2, Naoki Ohashi^1,4 (1.NIMS, 2.Waseda Uni., 3.Uni. Tokyo, 4.Tokyo Inst. Tech.)

3:45 PM - 4:00 PM

[19p-H112-10] Al Sustitution level dependence of acoustic properties for Ca₃Ta(Ga_1-xAl_x)₃Si₂O₁₄(x=0,0.25,0.5,0.75) single crystals

〇Tetsuo Kudo¹, Yuui Yokota², Yuji Ohashi¹, Yasuhiro Shoji^1,3, Kei Kamada^2,3, Shunsuke Kurosawa², Akira Yoshikawa^1,2,3 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A)

4:00 PM - 4:15 PM

[19p-H112-11] Large size growth of GdAlO₃/Al₂O₃ eutectic

〇KEI KAMADA¹, Hiroaki Yamaguchi², Nobuhiro Yasui³, Ryota Ohashi,³, Toru Den³, Shunsuke Kurosawa^2,1, Yasuhiro Shoji², Yuui Yokota¹, Yuji Ohashi², Akira Yoshikawa^1,2 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ., 3.Canon)

4:15 PM - 4:30 PM

[19p-H112-12] Crystal growth and Near Infrared Emission Properties of Garnet-type Oxide Scintillator Crystals

〇Akihiro Yamaji¹, Shunsuke Kurosawa², Rikito Murakami¹, Yuji Ohashi¹, Kei Kamada², Yuui Yokota², Akira Yoshikawa^1,2 (1.Tohoku Univ. IMR, 2.Tohoku Univ. NICHe)

4:30 PM - 4:45 PM

[19p-H112-13] Improvement of Ce Distribution on Ce:Y₃Al₅O₁₂ Single Crystals Grown By Micro-Pulling-deown Method

〇Yuui Yokota¹, Zeng Zhong², Ohashi Yuji³, Shunsuke Kurosawa¹, Kamada Kei^1,4, Kawazoe Yoshiyuki¹, Yoshikawa Akira^1,3,4 (1.NICHe, Tohoku Univ., 2.Chongqing Univ., 3.IMR, Tohoku Univ., 4.C&A)

4:45 PM - 5:00 PM

[19p-H112-14] Na concentration dependence of optical and scintillation properties for Na co-doped Eu:LiCaAlF₆ neutron scintillator crystals

〇(M1C)Chieko Tanaka¹, Yuui Yokota², Shunsuke Kurosawa², Akihiro Yamaji¹, Yuji Ohashi¹, Kei Kamada^2,3, Akira Yoshikawa^1,2,3 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A)

5:00 PM - 5:15 PM

[19p-H112-15] Crystal Growth and Evaluation of Flouride Optical Crystal

〇Hidetoshi Nakahata¹, Rikio Nakajima¹ (1.NAKAJIMA GIKEN)

Poster presentation

[20p-P15-1~1] 15.1 Bulk crystal growth

Sun. Mar 20, 2016 4:00 PM - 6:00 PM P15 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

4:00 PM - 6:00 PM

[20p-P15-1] Photoluminescence of microwave-synthesized AgGaS₂ polycrystals
in the Ag₉GaS₆-AgGaS₂ eutectic reaction region

〇Masami Susaki¹ (1.OPUCT)

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[19a-H112-1~8] 15.1 Bulk crystal growth

△ [19a-H112-1] Thickness dependence of AlN crystal quality fabricated by Elementary Source Vapor Phase Epitaxy (ESVPE)

[19a-H112-2] Lateral Dopant Segregation of β-Ga₂O₃ Single Crystals by Edge-defined Film-fed Growth (EFG) Method

[19a-H112-3] Directionally Solidified β-Ga₂O₃ Single Crystals (Ⅰ)

[19a-H112-4] Directionally Solidified β-Ga₂O₃ Single Crystals (Ⅱ)

▲ [19a-H112-5] Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth

[19a-H112-6] Tilting effects of ellipsoidal mirror on crystal growth of silicon by IR-FZ method

[19a-H112-7] Effect of inner wall of the crucible and B₂O₃addition on the quality in the VB-Ge crystal growth

[19a-H112-8] Numerical Simulation on InGaSb Crystal Growth on International Space Station

[19p-H112-1~15] 15.1 Bulk crystal growth

[19p-H112-1] Observation of Stacking Faults in Silica Colloidal Crystals

[19p-H112-2] Two-dimensional nucleation of colloidal crystals

[19p-H112-3] The Effect of the Morphology of the Solid/liquid Interface on Impurity Partitioning Behaviours during Colloidal Polycrystallization

[19p-H112-4] Relaxation of a large amount of local strain in protein crystals by using seed crystals

[19p-H112-5] Investigation on primary phases in potassium tantalate niobate (KTN) crystal growth

[19p-H112-6] Observation of Dislocations in a Lithium Tantalate

[19p-H112-7] Evaluation of SAW Properties of Metal-Doped LiTaO₃ Substrates

[19p-H112-8] Oxygen Partitioning during Growth of Congruent Lithium Niobate (3)

▲ [19p-H112-9] Electrical resistivity, dielectric and piezoelectric properties of Ca₃TaGa_3-xAl_xSi₂O₁₄ (CTGAS) single crystals as a function of Al content

[19p-H112-10] Al Sustitution level dependence of acoustic properties for Ca₃Ta(Ga_1-xAl_x)₃Si₂O₁₄(x=0,0.25,0.5,0.75) single crystals

[19p-H112-11] Large size growth of GdAlO₃/Al₂O₃ eutectic

[19p-H112-12] Crystal growth and Near Infrared Emission Properties of Garnet-type Oxide Scintillator Crystals

[19p-H112-13] Improvement of Ce Distribution on Ce:Y₃Al₅O₁₂ Single Crystals Grown By Micro-Pulling-deown Method

[19p-H112-14] Na concentration dependence of optical and scintillation properties for Na co-doped Eu:LiCaAlF₆ neutron scintillator crystals

[19p-H112-15] Crystal Growth and Evaluation of Flouride Optical Crystal

[20p-P15-1~1] 15.1 Bulk crystal growth

[20p-P15-1] Photoluminescence of microwave-synthesized AgGaS₂ polycrystals
in the Ag₉GaS₆-AgGaS₂ eutectic reaction region

Authentication

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[19a-H112-1~8] 15.1 Bulk crystal growth

△ [19a-H112-1] Thickness dependence of AlN crystal quality fabricated by Elementary Source Vapor Phase Epitaxy (ESVPE)

▲ [19a-H112-5] Effect of packing structure of Si chunks on melting process and carbon contamination in Czochralski silicon crystal growth

[19p-H112-1~15] 15.1 Bulk crystal growth

▲ [19p-H112-9] Electrical resistivity, dielectric and piezoelectric properties of Ca3TaGa3-xAlxSi2O14 (CTGAS) single crystals as a function of Al content

[20p-P15-1~1] 15.1 Bulk crystal growth

Authentication

▲ [19p-H112-9] Electrical resistivity, dielectric and piezoelectric properties of Ca₃TaGa_3-xAl_xSi₂O₁₄ (CTGAS) single crystals as a function of Al content