[19p-H121-1~16] 15.4 III-V-group nitride crystals

△ [19p-H121-14] Fabrication and optical characterization of GaN porous structures by anisotropic wet etching

〇Yusuke Kumazaki¹, Satoru Matsumoto¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

Keywords:electrochemistry,wet etching,photocatalysis

In this study, GaN porous structures were fabricated by two kinds of anisotropic wet etching for high-efficiency photoelectrode. We succeeded in formation of straight pores oriented in [000-1] direction by electrochemical etching process. Next, we adopted TMAH which is known for being capable of anisotropic wet etching of GaN, and obtained pores with {1-100} facet. In addition, reflectance measurements revealed that porous structures have the different refractive index with bulk GaN.