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[19p-H121-15] Characterization of Electrical Property and Band-Structure in Carbon Nanotube/GaN
Keywords:Nitride semiconductor,Carbon Nanotube,Band-structure
Recently power devices using GaN have attracted much attention because of high power and high efficiency due to the wide band-gap. These power devices are generally used in high temperature operation by the heat dissipation of devices. Therefore, for high device reliability, it is important to design the mounting structure for heat sink to obtain efficient heat spreading. Carbon nanotube is expected to be excellent heat conductor for heat spreading of the power device because of extremely high thermal conductivity. Therefore, it is thought that carbon nanotube is very useful for electrode material with high thermal conductivity in the GaN power device. However, there are no reports on detail electrical properties and band-structure for the hetero-interface between the carbon nanotube and the GaN. In this paper, we present results of electrical characterization for band-structure in carbon nanotube/GaN hetero-interface.