[19p-H121-1~16] 15.4 III-V-group nitride crystals

[19p-H121-16] HRTEM Observation and Strain Analysis of r-Plane Slip in Nano-Indentation on bulk GaN surface

〇Toshiya Yokogawa¹, Sachi Niki², Junko Maekawa², Masahiko Aoki² (1.Yamaguchi University, 2.Ion Technology Ctr)

Keywords:Nitride semiconductor,Nano-indentation,Dislocation

Bulk GaN substrate has attracted much attention because of high quality and low dislocation density. We previously reported the dislocation formation and movement in surface dimples nano-indented on the high quality bulk GaN, and also proposed the mechanism of r-plane (-1012) slip initiating plastic deformation, so called pop-in event, which is supported by molecular dynamics simulation. In this paper we present evidence of r-plane (-1012) slip mechanism in indented GaN surface by using nano-indentation with smaller radius indenter (100nm) and lower pop-in load, comparing with our previous studies, and strain analysis by HRTEM observation right after the plastic deformation.