Toshiya Yokogawa

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Speaker, Author, Co-Author

Sat. Mar 19, 2016 1:15 PM - 6:00 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[19p-H121-1~16] 15.4 III-V-group nitride crystals

5:30 PM - 5:45 PM

[19p-H121-15] Characterization of Electrical Property and Band-Structure in Carbon Nanotube/GaN

〇Toshiya Yokogawa¹, Shota Miyake¹, Akira Yamashita¹, Yuji Mouri¹, Masaharu Nakayama¹ (1.Yamaguchi Univ.)

5:45 PM - 6:00 PM

[19p-H121-16] HRTEM Observation and Strain Analysis of r-Plane Slip in Nano-Indentation on bulk GaN surface

〇Toshiya Yokogawa¹, Sachi Niki², Junko Maekawa², Masahiko Aoki² (1.Yamaguchi University, 2.Ion Technology Ctr)

Sun. Mar 20, 2016 8:45 AM - 11:45 AM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20a-H121-1~11] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

[20a-H121-6] Control of Bandgap in InGaN Quantum Wells by Selective Area Diffusion of Indium and Fabrication of Optical Waveguide

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi University, 2.JASRI)

Sun. Mar 20, 2016 1:15 PM - 7:45 PM H121 (H)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[20p-H121-1~24] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM

[20p-H121-4] Influence of Threading Dislocation on Interface between Insulator and GaN

〇Toshiya Yokogawa¹, Yudai Yamamoto¹, Takuya Kakoi¹, Takanori Nishihira¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Yamaguchi University)