[20a-H121-1~11] 15.4 III-V-group nitride crystals

[20a-H121-6] Control of Bandgap in InGaN Quantum Wells by Selective Area Diffusion of Indium and Fabrication of Optical Waveguide

〇Toshiya Yokogawa¹, Takuya Kakoi¹, Yasuhiko Imai², Shigeru Kimura² (1.Yamaguchi University, 2.JASRI)

Keywords:Nitride semiconductor,Quantum wells,Diffusion

Disordering of quantum wells is useful technique because it is possible to control the bandgap and refractive index at the selective area of the quantum wells for application of optical waveguide. Previously, we reported on strong relationship between defect density and In diffusion in the InGaN quantum wells. And we also reported that it was possible to suppress the In diffusion in the InGaN quantum wells by suppressing defect formation using surface passivation of the quantum wells. In this paper, we demonstrate control of bandgap in InGaN quantum wells by selective area diffusion of Indium using selective area surface passivation and fabrication of optical waveguide.