[19p-H135-1~7] Science and Application of Extreme Nonlinear Phenomena Induced by Intense Terahertz and Infrared Electromagnetic Field

[19p-H135-5] Very intense terahertz electric fields induced at atomic-scale nanogap electrodes and their effects on carrier dynamics in nanostructures

〇Kazuhiko Hirakawa^1,2, Kenji Yoshida¹, Shaoqing Du¹, Ya Zhang¹ (1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo)

Keywords:terahertz,nanogap electrodes,single molecules

We have investigated the electron transport in single molecule transistors under terahertz (THz) radiation. By employing an antenna structure with a sub-nm-wide gap, we concentrate the THz radiation onto a single molecule. THz-induced photon-assisted tunneling in the single molecule transistors is observed. The THz field induced at the molecule exceeds 100 kV/cm, which is enhanced by a factor of ~10⁵ from the field in the free space.