2016年第63回応用物理学会春季学術講演会

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10 スピントロニクス・マグネティクス » 10 スピントロニクス・マグネティクス(ポスター)

[19p-P1-1~74] 10 スピントロニクス・マグネティクス(ポスター)

2016年3月19日(土) 13:30 〜 15:30 P1 (屋内運動場)

13:30 〜 15:30

[19p-P1-63] Signatures of Spin Nernst Effect in Metallic Bilayers

〇(PC)Sheng Peng1、Sakuraba Yuya1、Mitani Seiji1、Hayashi Masamistu1 (1.National Institute for Materials Science)

キーワード:Spin Hall Magnetoresistance,Spin Nernst Effect,Spin Current

Spin Hall magnetoresistance (SMR) is first reported in the heavy metal (HM)| ferromagnetic insulator (FI) bilayers, such as Pt|YIG and Ta|YIG [1-5]. Through the Spin Hall effect (SHE), spin current is created in the HM. Depending on the magnetization direction of FI, spin current is accumulated at the HM/FI interface and then converted into a charge current due to the inverse SHE in the HM layer. As a result, a slight change in the resistance is observed depending on the magnetization direction: the SMR serves as a spin current detector. Recently SMR in metallic bilayers, such as Ta|CoFeB and W|CoFeB, has also been reported [6, 7]. Here we show that a temperature gradient across the films can generate spin current and induce SMR in W|CoFeB metallic bilayers [Fig. 1]. These results indicate that temperature gradient driven charge current can generate transverse spin current by SHE in W, suggesting the observation of the spin Nernst effect (SNE) [8].