[19p-P11-1~14] 12.2 Characterization and Materials Physics

[19p-P11-2] Characterization of traps in OTFT by transfer characteristics and current DLTS measurements at 300 K

Takashi Ota¹, Hideyuki Akanuma¹, Kento Nakashima¹, 〇Yutaka Tokuda¹, Kenji Nakamura², Tetsuya Katou², Masayuki Katayama² (1.Aichi Inst. of Tech., 2.DENSO CORP.)

Keywords:DLTS,TFT

We present the method to characterize traps in the wider energy range for organic thin film transistors (OTFTs) by employing the transfer characteristic measurements and isothermal current DLTS measurements for MOS structures with the source electrode shorted to the drain electrode at room temperature. Bottom gate top contact OTFTs were used consisting of C10-DNTT as the organic semiconductor. Trap distribution in the energy range from valence band edge to 0.30 eV and in the range from 0.55 to 0.7 eV was obtained. Further, we try to estimate the trap distribution in the energy range from 0.3 to 0.55 eV.