The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

12 Organic Molecules and Bioelectronics » 12.2 Characterization and Materials Physics

[19p-P11-1~14] 12.2 Characterization and Materials Physics

Sat. Mar 19, 2016 4:00 PM - 6:00 PM P11 (Gymnasium)

4:00 PM - 6:00 PM

[19p-P11-2] Characterization of traps in OTFT by transfer characteristics and current DLTS measurements at 300 K

Takashi Ota1, Hideyuki Akanuma1, Kento Nakashima1, 〇Yutaka Tokuda1, Kenji Nakamura2, Tetsuya Katou2, Masayuki Katayama2 (1.Aichi Inst. of Tech., 2.DENSO CORP.)

Keywords:DLTS,TFT

We present the method to characterize traps in the wider energy range for organic thin film transistors (OTFTs) by employing the transfer characteristic measurements and isothermal current DLTS measurements for MOS structures with the source electrode shorted to the drain electrode at room temperature. Bottom gate top contact OTFTs were used consisting of C10-DNTT as the organic semiconductor. Trap distribution in the energy range from valence band edge to 0.30 eV and in the range from 0.55 to 0.7 eV was obtained. Further, we try to estimate the trap distribution in the energy range from 0.3 to 0.55 eV.