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[19p-P12-3] Non-polar ZnO film growth on r-plane sapphire substrate using high-temperature H2O generated by a catalytic reaction
Keywords:catalytic reaction,non-polar ZnO
ZnO is a direct-transition type semiconductor having a wide bandgap of 3.37eV at room temperature and is grown using abundant resources such as zinc and oxygen. We have developed a new growth method for preparing ZnO films by reacting dimethylzinc and high-temperature H2O generated from the Pt-catalyzed exothermic H2 and O2
reaction. The resulting ZnO films grown on a-plane sapphire substrates exhibited excellent electronic properties. However, c-plane ZnO films grown on the a-plane sapphire exhibit the piezoelectric field along the [0001] direction. Therefore, light emission efficiency of optoelectronic devices with quantum well structure becomes low. On the other hand, non-polar ZnO films can be grown on r-plane sapphire substrates. In this study, non-polar ZnO films were grown on r-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H2O produced by a Pt-catalyzed H2 and O2 reaction. The deposition temperature was 500 oC, 600 oC, 650 oC and 700 oC. Obtained ZnO films were evaluated by atomic force microscope, x-ray diffraction, and As a result of the experiment, the ZnO films on r-plane sapphire substrates showed anisotropic surface morphology with nanostripe arrays and exhibited intense (11-20) peak associated with the ZnO (11-20) index plane at 2q=56.64o. Electron mobility of the ZnO films was small (24.6 cm2/Vs) compared to those of the ZnO films grown on a-plane sapphire substrates (>100 cm2/Vs).
reaction. The resulting ZnO films grown on a-plane sapphire substrates exhibited excellent electronic properties. However, c-plane ZnO films grown on the a-plane sapphire exhibit the piezoelectric field along the [0001] direction. Therefore, light emission efficiency of optoelectronic devices with quantum well structure becomes low. On the other hand, non-polar ZnO films can be grown on r-plane sapphire substrates. In this study, non-polar ZnO films were grown on r-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H2O produced by a Pt-catalyzed H2 and O2 reaction. The deposition temperature was 500 oC, 600 oC, 650 oC and 700 oC. Obtained ZnO films were evaluated by atomic force microscope, x-ray diffraction, and As a result of the experiment, the ZnO films on r-plane sapphire substrates showed anisotropic surface morphology with nanostripe arrays and exhibited intense (11-20) peak associated with the ZnO (11-20) index plane at 2q=56.64o. Electron mobility of the ZnO films was small (24.6 cm2/Vs) compared to those of the ZnO films grown on a-plane sapphire substrates (>100 cm2/Vs).