[19p-P2-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-P2-4] Effect of dislocation accumulation in STI type ULSI cells on their electric characteristics (3)

〇Syun Yonekubo¹, Syougo Arashi², Mitsuhiro Sato², Ken Yamaguti³, Takuya Maruizumi¹ (1.Tokyo City Univ, 2.Kitami Institute of Tec, 3.Advance Soft)

Keywords:dislocation