Oral presentation

[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 19, 2016 9:00 AM - 12:30 PM S223 (S2)

Nobuya Mori(Osaka Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-S223-1] Strong-Coupling Analysis Method for Multiple Devices and Circuit

〇Masanori Harada¹, Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft)

9:15 AM - 9:30 AM

[19a-S223-2] Transient Analysis of CMOS Inverter Chain by Three-Dimensional Device Simulation

〇Atsushi Hagiwara¹, Masanori Harada¹, Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corporation)

9:30 AM - 9:45 AM

[19a-S223-3] Prallel computation by using Three-dimensional device simulator

〇Takuhito Kuwabara¹, Yasuyuki Ookura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft)

9:45 AM - 10:00 AM

[19a-S223-4] An investigation of the convolution method for Monte Carlo Ion Implantation

〇Yasuyuki Ohkura¹, Ken Yamaguchi¹, Hideaki Koike¹ (1.AdvanceSoft Corp.)

10:00 AM - 10:15 AM

[19a-S223-5] Computational nano OPC DFM for LV Fin-type SRAM

〇Kazuya Kadota¹ (1.NanoscienceLab)

10:15 AM - 10:30 AM

[19a-S223-6] Device scaling effects on soft errors caused by long traveled delta-rays

〇Shimpei Fuchida^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (1.Tokyo Univ., 2.ISAS/JAXA)

10:30 AM - 10:45 AM

△ [19a-S223-7] Numerical analysis of focal position dependence of laser-based soft-error simulation
employing two-photon absorption process

〇HIROAKI ITSUJI^1,2, DAISUKE KOBAYASHI^1,2, KAZUYUKI HIROSE^1,2 (1.Univ. Tokyo, 2.ISAS/JAXA)

11:00 AM - 11:15 AM

[19a-S223-8] Suppression of the parasitic bipolar effect of the SOI-MOSFET by narrowing band-gap in Source/Drain region

〇(M1)Yusuke Wada¹, Kota Yamamoto¹, Yoshihiro Takahashi¹, Yan Wu¹ (1.Nihon Univ.)

11:15 AM - 11:30 AM

△ [19a-S223-9] Simulation study on the threshold voltage definition of TFET

〇Yoshiaki Mori¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

11:30 AM - 11:45 AM

[19a-S223-10] Machine Learning of Nano-device Characteristic by Using Neural Network

〇Senami Furubayashi¹ (1.Waseda Univ.)

11:45 AM - 12:00 PM

△ [19a-S223-11] Quantum Transport Simulaion of Si nanowire MOSFET with a Sub-10nm Channel Length

〇Yutaka Hirai¹, Hideaki Tsuchiya¹, Matsuto Ogawa¹ (1.Kobe Univ.)

12:00 PM - 12:15 PM

[19a-S223-12] Effect of localized impurities on electron transport in single-layer semiconductors

〇Reita Igarashi¹ (1.Tsukuba Univ.)

12:15 PM - 12:30 PM

[19a-S223-13] Design of SiGe Alloy with Low Thermal Conductivity: Molecular Dynamics Simulations

〇Norihiko Takahashi¹, Chioko Kaneta¹ (1.Fujitsu Laboratories Ltd.)

Poster presentation

[19p-P2-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 19, 2016 1:30 PM - 3:30 PM P2 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[19p-P2-1] Photoluminescence properties of air-annealed β-FeSi₂ bulk single crystals (2)

〇(B)Haruya Kobayashi¹, Keisuke Sato¹, Kan-ichiro Nakaoka¹, Yoshiaki Hara¹ (1.NIT, Ibaraki Col.)

1:30 PM - 3:30 PM

[19p-P2-2] Photoluminescence Mechanizm of Si Quantum Dots with Ge Core

〇Keigo Kondou¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

1:30 PM - 3:30 PM

[19p-P2-3] Analysis of local electric conductive properties by electronic tension density

〇Masato Senami¹, Hiroo Nozaki¹, Kazuhide Ichikawa¹, Akitomo Tachibana¹ (1.Kyoto Univ.)

1:30 PM - 3:30 PM

[19p-P2-4] Effect of dislocation accumulation in STI type ULSI cells on their electric characteristics (3)

〇Syun Yonekubo¹, Syougo Arashi², Mitsuhiro Sato², Ken Yamaguti³, Takuya Maruizumi¹ (1.Tokyo City Univ, 2.Kitami Institute of Tec, 3.Advance Soft)

1:30 PM - 3:30 PM

[19p-P2-5] Simulation of Reverse Recovery Time for Self-bias Channel Diode With Super Junction Structure

〇(M1)Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

Oral presentation

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 19, 2016 3:30 PM - 6:00 PM S223 (S2)

Tomo Ueno(TUAT), Koichiro Saga(Sony)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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3:30 PM - 3:45 PM

[19p-S223-1] NEGF simulation based on a random-matrix model of confined phonons

Gennady Mil'nikov¹, 〇Nobuya Mori¹ (1.Osaka Univ.)

3:45 PM - 4:00 PM

[19p-S223-2] Effects of boundary conditions on phonon transport simulation

Akihiro Ueno¹, Shinji Koike¹, 〇Nobuya Mori¹ (1.Osaka Univ.)

4:00 PM - 4:15 PM

[19p-S223-3] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core

〇(B)Kentaro Yamada¹, Keigo Kondo¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

4:15 PM - 4:30 PM

[19p-S223-4] Analysis of Increased Ionization Energy in Heavily Doped Thin Si Films by Dielectric Mismatch

〇Takahisa Tanaka¹, Takahashi Tsunaki¹, Uchida Ken¹ (1.Keio Univ.)

4:30 PM - 4:45 PM

△ [19p-S223-5] The research of quantification of carrier density by dC/dV and dC/dz measurement with Scanning Nonlinear Dielectric Microscopy

〇Bin Liu¹, Yoshiomi Hiranaga¹, Norimichi Chinone¹, Yasuo Cho¹ (1.Tohoku Univ.)

4:45 PM - 5:00 PM

△ [19p-S223-6] A study on atomically flat surface of Si(100) realized by annealing in Ar/H₂ ambient

〇(D)Sohya Kudoh¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[19p-S223-7] Effect of residual gas upon ring-structure formation inside voids by thermal desorption of SiO₂ layer

〇Yoshiharu Enta¹, Shodai Osanai¹, Takahito Ogasawara¹ (1.Hirosaki Univ.)

5:15 PM - 5:30 PM

[19p-S223-8] H₂ Molecule Condensation in SiO₂/Si Interface Structures

〇Koichi Kato¹, Katsuyuki Fukutani¹ (1.Univ. Tokyo, Industrial Inst.)

5:30 PM - 5:45 PM

[19p-S223-9] The development of artificial intelligence fusion adsorption simulator for semiconductor process

〇Emi Sato¹, Manami Sato¹, Yukiko Obara¹, Kenji Inaba¹, Yukie Ishizawa¹, Masayuki Miyano¹, Ryuji Miura¹, Ai Suzuki¹, Naoto Miyamoto¹, Nozomu Hatakeyama¹, Akira Miyamoto¹, Patrick Bonnaud¹ (1.Tohoku Univ.)

5:45 PM - 6:00 PM

[19p-S223-10] Particle removal efficiency evaluation of filters in 70 ℃ diluted hydrochloric acid

〇Tomoyuki Takakura¹, Shuichi Tsuzuki¹ (1.Nihon Pall Ltd.)

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-1] Strong-Coupling Analysis Method for Multiple Devices and Circuit

[19a-S223-2] Transient Analysis of CMOS Inverter Chain by Three-Dimensional Device Simulation

[19a-S223-3] Prallel computation by using Three-dimensional device simulator

[19a-S223-4] An investigation of the convolution method for Monte Carlo Ion Implantation

[19a-S223-5] Computational nano OPC DFM for LV Fin-type SRAM

[19a-S223-6] Device scaling effects on soft errors caused by long traveled delta-rays

△ [19a-S223-7] Numerical analysis of focal position dependence of laser-based soft-error simulation
employing two-photon absorption process

[19a-S223-8] Suppression of the parasitic bipolar effect of the SOI-MOSFET by narrowing band-gap in Source/Drain region

△ [19a-S223-9] Simulation study on the threshold voltage definition of TFET

[19a-S223-10] Machine Learning of Nano-device Characteristic by Using Neural Network

△ [19a-S223-11] Quantum Transport Simulaion of Si nanowire MOSFET with a Sub-10nm Channel Length

[19a-S223-12] Effect of localized impurities on electron transport in single-layer semiconductors

[19a-S223-13] Design of SiGe Alloy with Low Thermal Conductivity: Molecular Dynamics Simulations

[19p-P2-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-P2-1] Photoluminescence properties of air-annealed β-FeSi₂ bulk single crystals (2)

[19p-P2-2] Photoluminescence Mechanizm of Si Quantum Dots with Ge Core

[19p-P2-3] Analysis of local electric conductive properties by electronic tension density

[19p-P2-4] Effect of dislocation accumulation in STI type ULSI cells on their electric characteristics (3)

[19p-P2-5] Simulation of Reverse Recovery Time for Self-bias Channel Diode With Super Junction Structure

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1] NEGF simulation based on a random-matrix model of confined phonons

[19p-S223-2] Effects of boundary conditions on phonon transport simulation

[19p-S223-3] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core

[19p-S223-4] Analysis of Increased Ionization Energy in Heavily Doped Thin Si Films by Dielectric Mismatch

△ [19p-S223-5] The research of quantification of carrier density by dC/dV and dC/dz measurement with Scanning Nonlinear Dielectric Microscopy

△ [19p-S223-6] A study on atomically flat surface of Si(100) realized by annealing in Ar/H₂ ambient

[19p-S223-7] Effect of residual gas upon ring-structure formation inside voids by thermal desorption of SiO₂ layer

[19p-S223-8] H₂ Molecule Condensation in SiO₂/Si Interface Structures

[19p-S223-9] The development of artificial intelligence fusion adsorption simulator for semiconductor process

[19p-S223-10] Particle removal efficiency evaluation of filters in 70 ℃ diluted hydrochloric acid

Authentication

Sessions

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [19a-S223-7] Numerical analysis of focal position dependence of laser-based soft-error simulationemploying two-photon absorption process

△ [19a-S223-9] Simulation study on the threshold voltage definition of TFET

△ [19a-S223-11] Quantum Transport Simulaion of Si nanowire MOSFET with a Sub-10nm Channel Length

[19p-P2-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [19p-S223-5] The research of quantification of carrier density by dC/dV and dC/dz measurement with Scanning Nonlinear Dielectric Microscopy

△ [19p-S223-6] A study on atomically flat surface of Si(100) realized by annealing in Ar/H2 ambient

Authentication

△ [19a-S223-7] Numerical analysis of focal position dependence of laser-based soft-error simulation
employing two-photon absorption process

△ [19p-S223-6] A study on atomically flat surface of Si(100) realized by annealing in Ar/H₂ ambient