The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[19p-S223-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sat. Mar 19, 2016 3:30 PM - 6:00 PM S223 (S2)

Tomo Ueno(TUAT), Koichiro Saga(Sony)

5:15 PM - 5:30 PM

[19p-S223-8] H2 Molecule Condensation in SiO2/Si Interface Structures

Koichi Kato1, Katsuyuki Fukutani1 (1.Univ. Tokyo, Industrial Inst.)

Keywords:H2 molecule,Silicon oxide interface,Silicon

As H atoms are condensed in SiO2/Si interfaces and deteriorte the interfaces, H2 molecules also seem to be condesed at the interfaces. Base on the first principles calculations, H2 molecules are found to be condensed at the interfaces. Electronic orbitals of the H and surrounding atoms hybridize together, leaving the H atoms of lower 1s orbitals negatively chagred. The negatively charged H atoms must be stable with the positively charged interface Si atoms.