[19a-S223-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [19a-S223-9] Simulation study on the threshold voltage definition of TFET

〇Yoshiaki Mori¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

Keywords:tunnel FET,threshold voltage,universality of definition

In this paper, we show a new possible definition of the threshold voltage of TFET. A normalized transconductance takes its maximal value at the threshold voltage. This definition has the universality for TFETs having practical device parameters.