[19p-P4-1~17] 13.5 デバイス／集積化技術

▲ [19p-P4-14] Tunneling-transport operation of selectively-doped dopant-atom transistors up to room temperature

Samanta Arup¹、〇Moraru Daniel Ioan^1,2、Takasu Yuki¹、Mizuno Takeshi¹、Tabe Michiharu¹ (1.RIE, Shizuoka Univ、2.Fac. Eng.,Shizuoka U)

キーワード：dopant-atom,single-electron tunneling,room temperature

Dopant-atom transistors are an alternative for achieving atomic- and molecular-level functionalities for future electronics. Transport in such devices occurs by electron tunneling via individual dopant(s) or “clustered” dopants. Recently, we further correlated the dopant distribution with potential landscapes as obtained by Kelvin probe force microscopy (KPFM). In this work, we show the impact of “clustered” dopants in ultra-narrow-channel transistors on the tunneling-transport operation up to room temperature.