Electroluminescence characterization for studying the impact of GaAs cell structure on the cell performance

Tomoyuki Inoue; Kasidit Toprasertpong; Amaury Delamarre; Kentaroh Watanabe; Jean Fransois Guillemoles; Masakazu Sugiyama; Yoshiaki Nakano

Presentation information

Symposium

Symposium » Blazing frontier of luminescence imaging for characterization of semiconductor crystals and devices

[19p-S011-1~11] Blazing frontier of luminescence imaging for characterization of semiconductor crystals and devices

Sat. Mar 19, 2016 1:30 PM - 5:45 PM S011 (S0)

Yasuaki Ishikawa(NAIST), Ryuji Katayama(Tohoku Univ.), Hiroshi Yano(Univ. of Tsukuba)

3:00 PM - 3:15 PM

[19p-S011-5] Electroluminescence characterization for studying the impact of GaAs cell structure on the cell performance

〇Tomoyuki Inoue¹, Kasidit Toprasertpong¹, Amaury Delamarre^1,2, Kentaroh Watanabe^1,2, Jean Fransois Guillemoles², Masakazu Sugiyama^1,2, Yoshiaki Nakano^1,2 (1.Tokyo Univ., 2.NextPV)

Keywords:GaAs,Electroluminescence

Internal luminescence effieicny with GaAs p-i-n cells was measured in order to investigate the impact of the cell structure. We have demonstrated the effect of Back Surface Field (BSF) lyaer. BSF layer works for better collection of carriers from the base layer. In this study, the enhanced internal luminescence efficiency was shown by BSF layer.