[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-5] Printing deposition of thin Cu film by ballistic-hot electron-irradiation

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

Keywords:Nanocrystalline silicon,Ballistic hot electron,Printing deposition

Nanocrystalline silicon (nc-Si) diode acts as a supplier of highly reducing hot electrons. In salt solutions, injected electrons induce direct reduction of positive ions leading to the growth of thin films. For enhancing the practical usefulness of this effect, we have developed a printing mode, where a target Si substrate is separately located in close proximity to the emitter, and then emitted electrons impinge upon a solution-coated substrate. It is demonstrated here that from spectroscopic and structural analyses thin Cu films are deposited on the irradiated area with no contaminations. This deposition scheme is also available for oxidized Si substrates.