[19p-W241-2~12] 10.4 Semiconductors, organic, optical, and quantum spintronics

▼ [19p-W241-9] Temperature dependence of spin relaxation time in GaAs/AlGaAs resonant tunneling bi-quantum-well

〇Yoshiki Nakamura¹, Takanori Aritake¹, Hao Wu¹, Canyu Jiang¹, Ko Nakayama¹, Shunichi Muto², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Hokkaido Univ.)

Keywords:spin relaxation,tunneling bi-quantum-well,resonant tunneling

In tunneling bi-quantum-well (TBQ), photoexcited electrons in the narrow well can tunnel to the wide well. Under resonant tunneling condition, the further reduction of the tunneling time was reported. In this study, we report the electron spin relaxation in GaAs/AlGaAs TBQ structures including resonant tunneling case. As a result, it is considerd that the spin relaxation in narrow wells is affected heavily by the tunneling between the ground state of narrow well and the first excited state of wide well.