[19p-W621-1~12] 8.4 Plasma etching

[19p-W621-11] Study of etching mechanism of transition metal using neutral beam enhanced complex reaction based on tight-binding quantum chemical molecular dynamics

〇Tomohiro Kubota¹, Hiroshi Ito², Momoji Kubo², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.IMR, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ.)

Keywords:transition metal complex,magnetoresistive RAM,etching process

Anisotropic etching of transition metals (especially magnetic materials) is important for realization of MRAM. Recently Gu and Samukawa reported a damage-free anisotropic etching of transition metals using neutral beam and transition metal complex. The etching mechanism was investigated based on tight-binding quantum chemical molecular dynamics.