[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

△ [20a-H101-2] Thermodynamic calculation of change in carbon solubility for various kinds of solvent for SiC solution growth

〇(B)Goki Hatasa¹, Shunta Harada¹, Miho Tagawa¹, Kenta Murayama¹, Tomohisa Kato², Toru Ujihara¹ (1.Nagoya Univ., 2.AIST)

Keywords:SiC,solution growth,thermodynamics

We calculated carbon solubility for various kinds of solvent for SiC solution growth by using CALPHAD method to reduce impurities in SiC crystal and improve growth rate. We revealed that Cr and Ti improve carbon solubility in solvent and Y increases carbonsolbility better than Cr.