[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[20a-H101-3] In-situ observation of competition between spiral growth and advancing step during solution growth of SiC

〇Sakiko Kawanishi^1,2, Takeshi Yoshikawa¹ (1.The Univ. Tokyo, 2.Tohoku University)

Keywords:silicon carbide,solution growth,in-situ observation

In-situ observation of solution growth interface of 4H-SiC during competition between spiral growth and advancing step was carried out. It was found that step height over 300 nm is needed to stop spiral growth by covering the spiral center. Step height was thus found to be the key factor to determine the growth mode.