[20a-H101-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[20a-H101-4] Relationship between basal plane dislocation and surface morphology during SiC solution growth

〇Tsukasa Hori¹, Kenta Murayama¹, Shunta Harada¹, Shiyu Xiao¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

Keywords:crystal growth,SiC

To achieve the practical use of SiC of low loss and high breakdown voltage, it is necessary to reduce defect density of SiC crystal. During solution growth, it is shown that long time growth reduce basal plane dislocation. But, it is not clear how basal plane dislocation behave during crystal growth. In this study, we investigate relationship between basal plane dislocation and surface morphology during SiC solution growth by evaluate surface morphology and basal plane dislocation by differential interference microscope and x-ray topography, respectively.