11:15 AM - 11:30 AM
[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures utilizing the defect control by ion implantation
Keywords:strained Si,ion implantation,group IV alloy
Oral presentation
15 Crystal Engineering » 15.5 Group IV crystals and alloys
Sun. Mar 20, 2016 9:00 AM - 11:30 AM H112 (H)
Masashi Kurosawa(Nagoya Univ.)
11:15 AM - 11:30 AM
Keywords:strained Si,ion implantation,group IV alloy