[20a-H112-1~10] 15.5 Group IV crystals and alloys

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

〇(B)Kaito Takeshima¹, Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

Keywords:Quantum dot,Germanium,solid-phase epitaxy