[20a-H113-1~12] 15.8 Crystal evaluation, impurities and crystal defects

[20a-H113-1] Thermal equilibrium point defects in silicon: Frenkel pairs or Schottky defects?

〇Masashi Suezawa¹, Yoshiaki Iijima¹, Ichiro Yonenaga¹ (1.I.M.R.,Tohoku Univ.)

Keywords:silicon,Frenkel pair,Scottky defect

It is still controversial that the nature of thermal equilibrium point defect in silicon is the Frenkel pair or the Schottky defect. We review models so far proposed and conclude that it is the Schottky defect based on our experimental results on the formation energy of point defects.