The 63rd JSAP Spring Meeting, 2016

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-H121-1~11] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 8:45 AM - 11:45 AM H121 (H)

Satoshi Kamiyama(Meijo Univ.), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

8:45 AM - 9:00 AM

[20a-H121-1] Radiative recombination dynamics of hot carriers excited in a n-type m-plane GaN single crystal with high carrier concentration

〇Kazunobu Kojima1, Hirotaka Ikeda2, Kenji Fujito2, Shigefusa Chichibu1 (1.Tohoku University, 2.Mitsubishi Chemical Corp.)

Keywords:GaN,Hot carrier