Emission characteristics of m-plane Al1-xInxN epilayers grown on a freestanding GaN substrate by MOVPE (Ⅳ)

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-H121-1~11] 15.4 III-V-group nitride crystals

Sun. Mar 20, 2016 8:45 AM - 11:45 AM H121 (H)

Satoshi Kamiyama(Meijo Univ.), Atsushi Yamaguchi(Kanazawa Inst. of Tech.)

9:15 AM - 9:30 AM

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Yoshiki Yamazaki¹, Yoshitaka Sato², Akira Uedono³ (1.IMRAM, Tohoku Univ., 2.Futaba Corp., 3.Univ. Tsukuba)

Keywords:AlInN,Emission mechanisms

Emission mechanisms of characterisrtic near-band-edge luminescence peak in m-plane Al_1-xIn_xN epilayers will be discussed.