The 63rd JSAP Spring Meeting, 2016

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[20a-S221-1~12] 13.3 Insulator technology

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S221 (S2)

Takeshi Ishida(HITACHI), Masato Koyama(TOSHIBA)

11:00 AM - 11:15 AM

[20a-S221-8] Optimization of growth conditions of rutile type TiO2 on Ge by PLD

〇(M1)Yoshihisa Suzuki1,2, Takahiro Nagata2, Yoshiyuki Yamashita2, Toshihide Nabatame2, Atsushi Ogura1, Toyohiro Chikyow2 (1.Meiji Univ., 2.NIMS)

Keywords:Germanium,TiO2