9:15 AM - 9:30 AM
[20a-S222-2] Control of hydrogen gas spillover to improve a response time of hydrogen gas sensor based on conductive Ga-doped ZnO films as sensing materials
Keywords:oxide semiconductor,hydrogen gas sensor,response time
We have been developing hydrogen gas sensors based on conductive Ga-doped ZnO films as sensing materials to achieve the sensors exhibiting good performance such as fast response time at a low temperature. Analysis of both the experimental data and the calculated results of ab initio electronic band structure calculations shows the following results: the presence of oxygen gas species which are adsorbed on the surface of the films and/or in the films may give rise to longer response time. We have developed a technology to decrease the density of the above species to achieve the sensors showing a very fast response time below 1 second at an operating temperature of 330 ℃. An issue to be resolved for the requirements of the application is to reduce operating temperatures.