[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-2] Interactions between Interface Traps in Electron Capture/Emission Processes

〇Toshiaki Tsuchiya¹ (1.Shimane Univ.)

Keywords:semiconductor,interface traps,charge pumping

We have reported previously that the maximum charge pumping (CP) current (I_CPMAX) from a single Si/SiO₂ interface trap is not a fixed value, i.e., fq, but is in the range 0<I_CPMAX≤2fq, where f is the gate pulse frequency, and q is the electron charge. In this study, based on the results, we obtained the actual number N_T of traps involved in individual MOSFETs, and found that CP current per trap becomes quite a lot smaller than fq for samples with N_T larger than a certain number. We investigated the cause.