[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-3] Transistor-level Characterization of SRAM Bit Failures Induced by Random Telegraph Noise

〇Tomoko Mizutani¹, Takuya Saraya¹, Kiyoshi Takeuchi¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Keywords:RTN,SRAM,SOI

Bit failure events induced by random telegraph noise (RTN) for silicon-on-thin-BOX (SOTB) SRAM cells was characterized by directly monitoring the storage node voltage of individual cells, using a device-matrix-array (DMA) TEG. Correlating the cell level RTN/failure waveforms with that of individual transistors that constitute the same cell, RTN of a specific transistor that causes the cell failure was identified.