[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-5] Fabrication and Characterization of Vt Tunable Triangular Channel FinFETs

〇Yongxun Liu¹, Takashi Matsukawa¹, Kazuhiko Endo¹, Shinichi Ouchi¹, Junichi Tsukada¹, Yuki Ishikawa¹, Wataru Mizubayashi¹, Yukinori Morita¹, Shinji Migita¹, Hiroyuki Ota¹, Meishoku Masahara¹ (1.AIST)

Keywords:Threshold voltage control,Triangular channel FinFET,Back gate bias