[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-6] Dependence of GIDL of FinFETs on ion implantation species for extension doping

〇Takashi Matsukawa¹, Shintaro Otsuka¹, Takahiro Mori¹, Yukinori Morita¹, Yongxun Liu¹, Shinichi O'uchi¹, Hirosi Fuketa¹, Shinji Migita¹, Meishoku Masahara¹ (1.AIST)

Keywords:FinFET,GIDL,ion implantation

The influence of the extension doping conditions on gate-induced drain leakage (GIDL) has been investigated to optimize fin field-effect transistors (FinFETs) for ultralow-power (ULP) applications. Dependence of GIDL on the implanted ion species, i.e., a larger GIDL for As than for P, are recognized. This results suggest that the residual defects due to extension doping increase the GIDL, and the suppression of the defects by the optimization of the doping process is the key to the optimization of FinFETs for ULP applications.