[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

[20a-S422-7] Effect of Shrinking the Device Width on the Behavior of Nanowire-type Dopant-Segregated Schottky Barrier Si-MOSFET

〇Kiyoshi Endo¹, Syuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Xu Zhang¹, Taiyu Xu¹, Syuhei Asada¹, Syunsuke Oba¹, Takashi Matsukawa², Meisyoku Masahara², Takanobu Watanabe¹ (1.Waseda Univ., 2.AIST)

Keywords:MOSFET,Nanowire