Kiyoshi Endo

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Speaker, Author, Co-Author

Sun. Mar 20, 2016 9:00 AM - 12:15 PM S422 (S4)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices and related technologies

[20a-S422-1~12] 13.5 Semiconductor devices and related technologies

10:45 AM - 11:00 AM

[20a-S422-7] Effect of Shrinking the Device Width on the Behavior of Nanowire-type Dopant-Segregated Schottky Barrier Si-MOSFET

〇Kiyoshi Endo¹, Syuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Xu Zhang¹, Taiyu Xu¹, Syuhei Asada¹, Syunsuke Oba¹, Takashi Matsukawa², Meisyoku Masahara², Takanobu Watanabe¹ (1.Waseda Univ., 2.AIST)

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