[20a-W241-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [20a-W241-11] Observation of tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge_1-xFe_x, MgO, and Fe

〇Kohei Okamoto¹, Yuuki Wakabayashi¹, Wataru Ashihara¹, Yoshisuke Ban¹, Shoichi Sato¹, Masaaki Tanaka¹, Shinobu Ohya¹ (1.The Univ. of Tokyo)

Keywords:spintronics,ferromagnetic semiconductor,tunneling magnetoresistance

In this study, we epitaxially grew trilayer structure composed of IV-group ferromagnetic semiconductor Ge_1-xFe_x, MgO, and Fe, and successfully observed tunneling magnetoresistance. This result suggests that Ge_1-xFe_x has spin-polarized carrier, and could be applied as spin injector and detector for Si and Ge.