The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

[20a-W241-1~12] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

Sun. Mar 20, 2016 9:00 AM - 12:15 PM W241 (W2・W3)

Tomohiro Koyama(Univ. of Tokyo)

11:30 AM - 11:45 AM

[20a-W241-10] Large magnetocapacitance effect at room temperature in magnetic tunnel junctions

Hideo Kaiju1, Masashi Takei1, Takahiro Misawa1, Taro Nagahama2, Junji Nishii1, Gang Xiao3 (1.RIES Hokkaido Univ., 2.Eng. Hokkaido Univ., 3.Phys. Brown Univ.)

Keywords:Magnetic tunnel junction,Magnetocapacitance effect,Debye-Frohlich model

The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.