[20a-W321-1~10] 3.7 Laser processing

△ [20a-W321-6] Low-temperature solid-phase epitaxial crystallization of buffer layer induced β-Ga₂O₃ films by excimer laser annealing

〇hiroki uchida¹, daishi shiojiri¹, daiji fukuda¹, nobuo tsuchimine², koji koyama³, satoshi kaneko⁴, akifumi matsuda¹, mamoru yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu., 3.Namiki Precision Jewel, 4.Kanagawa Ind. Tech. Center)

Keywords:Epitaxial,Excimer Laser