Elucidation of growing process of graphene on SiC (0001) surface formed by KrF excimer-laser irradiation

Presentation information

Oral presentation

3 Optics and Photonics » 3.7 Laser processing

Sun. Mar 20, 2016 9:00 AM - 11:45 AM W321 (W2・W3)

10:45 AM - 11:00 AM

〇(M2)Masakazu Hattori¹, Hiroshi Ikenoue¹, Daisuke Nakamura¹, Tatsuo Okada¹ (1.Kyushu Univ.)

Keywords:graphene,SiC,laser processing