The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

3 Optics and Photonics » 3.7 Laser processing

[20a-W321-1~10] 3.7 Laser processing

Sun. Mar 20, 2016 9:00 AM - 11:45 AM W321 (W2・W3)

Masaaki Sakakura(Kyoto Univ.)

10:30 AM - 10:45 AM

[20a-W321-6] Low-temperature solid-phase epitaxial crystallization of buffer layer induced β-Ga2O3 films by excimer laser annealing

hiroki uchida1, daishi shiojiri1, daiji fukuda1, nobuo tsuchimine2, koji koyama3, satoshi kaneko4, akifumi matsuda1, mamoru yoshimoto1 (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu., 3.Namiki Precision Jewel, 4.Kanagawa Ind. Tech. Center)

Keywords:Epitaxial,Excimer Laser