The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20a-W611-1~12] 16.3 Bulk, thin-film and other silicon-based solar cells

Sun. Mar 20, 2016 9:00 AM - 12:15 PM W611 (W6)

Hiroshi Noge(Fukushima Univ.)

10:00 AM - 10:15 AM

[20a-W611-5] Emitter Fabrication Process for n-type Crystalline Silicon Solar Cell

Kunihiko Nishimura1, Yumiko Kobayashi1, Tatsuro Watahiki1, Hidetada Tokioka1 (1.Mitsubishi Elec.)

Keywords:solar cell,boron,BBr3

The relationship between Boron emitter depth profiles of n-type crystalline Si solar cells and open circuit voltage Voc was derived by device simulation program. Then Boron emitter structures of various Boron profiles were fabricated by using thermal diffusion method with BBr3 source, and the Voc of them were measured respectively with passivation films. Therefore the suitable Boron profile fabrication method was revealed. Common problem of the surface Boron rich layer was solved by improving the additional annealing method.