[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-H101-16] Competitive effects of thermal oxidation on 4H-SiC MOSFET mobility between the degradation of the substrate quality and the removal of the damaged layer

〇Hirohisa Hirai¹, Ryota Sakuta¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:SiC,Mobility,thermal oxidation

Besides the deterioration of 4H-SiC MOSFET mobility due to the effects of interface defects, recently a change of the substrate quality by thermal oxidation of SiC has been reported. In this study we investigated the effect of themal oxidation on MOSFET mobility from the view point of the amount of oxidized SiC thickness. As a result, competitive effects of thermal oxiation between the degradation of the substrate quality and the removal of the damaged layer were observed.