[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-H101-17] P-Type Acceptor Density Dependence of Hall Mobility in SiC MOS Inversion Layer

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Takeharu Kuroiwa¹, Koji Kita², Satoshi Yamakawa¹ (1.Mitsubishi Electric, 2.Tokyo Univ.)

Keywords:SiC,MOS,hall mobility

Recently, hall mobility in SiC MOS inversiton layer has been studied. It has been reported that hall mobility in SiC MOS inversiton layer is mainly dominated by coulomb scattering. However, the effect of p-type acceptor density on hall mobility in SiC MOS inversion layer has not fully studied yet. In this study, p-type acceptor density dependence of hall mobility in SiC MOS inversion layer is studied with p-type epitaxial layers.