2:00 PM - 2:15 PM
[20p-H101-4] Observation of Extended Defects in a 4H-SiC Epitaxial Layer with Voltage Contrast Methods
Keywords:Silicon Carbide,Crystalline Defects,Scanning Electron Microscopy
Presentation information
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
[20p-H101-1~21] 15.6 Group IV Compound Semiconductors (SiC)
Sun. Mar 20, 2016 1:15 PM - 7:00 PM H101 (H)
Masashi Kato(NITech), Mitsuo Okamoto(AIST), Mitsuru Sometani(Fuji Electric)